Some comments on the photomagnetoelectric effect

A generalization of the theory for the photomagnetoelectric effect (PME) is reported. Experimental quantities such as short circuit current, open circuit voltage and magnetoresistance are described as functions of carrier lifetime, surface velocities at the sample surfaces, electron and hole mobilities, electron and hole concentrations, absorption and quantum efficiency coefficients, intensity of light, magnetic field and sample dimensions. The results of numerical computation are also presented.