X-ray imaging during plasma-source ion implantation

Plasma source ion implantation (PSII) is a technique for modifying stafaces that places the object to he modified directly into a plasma and then negatively pulse biases the object so as to implant positive ions. If the voltage is high enough, X-rays can he generated by electrons that are also accelerated by the pulse. This work describes techniques for imaging and characterizing the X-rays A pinhole camera was used to image the X-rays being emitted as electrons collided with surfaces in the chamber. The images show that X-rays are generated at the chamber walls and near the target. The time dependence of these X-rays during each pulse was examined using a PIN diode X-ray detector. Then, using another X-ray sensor and pulseheight analyzer, the spectra of the emitted X-rays was determined. The object is to relate the X-ray intensity and spectrum to the temporal and spatial values of the implantation dose so that it may he used as a process monitor and a control sensor.