| A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers |
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| 作者姓名： | 王刚 罗斌 潘炜 熊杰 |
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| 作者单位： | [1]School of Information Science and Technolog3, Southwest Jiaotong University, Chengdu 610031 |
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| 基金项目： | Supported by the Specialized Research Fund for the Doctoral Programme of Higher Education （SRFDP） of China under Grant No 20030613007. |
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| 摘 要： | Based on the transfer matrix method, we present a new one-dimensional steady-state model of vertical-cavity semiconductor optical amplifiers （VCSOAs）, in which the longitudinal carrier concentration distribution in the active region and the discontinuity of the refractive index inside the cavity is taken into consideration. The model is theoretically proven to be a reliable one for describing the standing wave effect in a periodic gain structure. By using this model, some optical amplification characteristics of VCSOAs are investigated.
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| 关 键 词： | 半导体 光学放大器 矩阵 垂直腔 周期性 |
| 收稿时间： | 2005-06-29 |
| 修稿时间： | 2005-06-29 |
A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers |
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| Wang Gang;Luo Bin;Pan Hui;Xiong Jie.A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers[J].Chinese Physics Letters,2005,22(10):2561-2564. |
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| Authors: | Wang Gang;Luo Bin;Pan Hui;Xiong Jie |
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