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Microwave response of a ballistic quantum dot |
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| Authors: | Z D Kvon G M Gusev A D Levin D A Kozlov E E Rodyakina A V Latyshev |
| Institution: | 1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia 2. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia 3. Instituto de Física, Universidade de S?o Paulo, 05315-970, S?o Paulo, SP, Brazil |
| Abstract: | The microwave response (photovoltage and photoconductance) of a lateral ballistic quantum dot made of a high-mobility two-dimensional electron gas in an AlGaAs/GaAs heterojunction has been studied experimentally in the frequency range of 110–170 GHz. It has been found that the asymmetry of the photovoltage with respect to the sign of the magnetic field has mesoscopic character and depends on both the magnetic field and the microwave power. This indicates the violation of the Onsager reciprocity relations regarding the electron-electron interactions in the mesoscopic photovoltaic effect. A strong increase in the conductance of the quantum dot induced by the microwave radiation and unrelated to heating, as well as the microwave-induced magneto-oscillations, has been discovered. |
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