| 水蒸气退火多孔硅发光性能的正电子谱学研究 |
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| 引用本文： | 李卓昕,王丹妮,王宝义,薛德胜,魏龙,秦秀波.水蒸气退火多孔硅发光性能的正电子谱学研究[J].物理学报,2010,59(12):8915-8919. |
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| 作者姓名： | 李卓昕 王丹妮 王宝义 薛德胜 魏龙 秦秀波 |
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| 作者单位： | (1)兰州大学磁学与磁性材料教育部重点实验室,兰州 730000; (2)兰州大学磁学与磁性材料教育部重点实验室,兰州 730000;中国科学院高能物理研究所核分析技术重点实验室,北京 100049; (3)中国科学院高能物理研究所核分析技术重点实验室,北京 100049 |
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| 基金项目： | 国家自然科学基金(批准号:10835006,10705031)资助的课题. |
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| 摘 要： | 使用正电子湮没寿命谱和正电子寿命-动量关联谱对水蒸气和真空条件下退火的多孔硅样品的微观缺陷结构进行表征,结合发射光谱测量结果,对影响多孔硅发光性能的因素进行了讨论.实验结果表明,水蒸气退火后样品孔壁表面的悬挂键减少,并出现新的E′γ和EX类缺陷.水蒸气退火后样品中两种缺陷数量发生变化是导致多孔硅样品发光增强的直接原因;真空退火未使样品中发光相关缺陷发生变化,样品的发光性能没有显著改变.
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| 关 键 词： | 多孔硅 光致发光 正电子湮没谱 |
| 收稿时间： | 2010-01-31 |
Positron annihilation study of photoluminescence of porous silicon treated by water vapor annealing |
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| Li Zhuo-Xin,Wang Dan-Ni,Wang Bao-Yi,Xue De-Sheng,Wei Long,Qin Xiu-Bo.Positron annihilation study of photoluminescence of porous silicon treated by water vapor annealing[J].Acta Physica Sinica,2010,59(12):8915-8919. |
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| Authors: | Li Zhuo-Xin Wang Dan-Ni Wang Bao-Yi Xue De-Sheng Wei Long Qin Xiu-Bo |
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| Institution: | Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China;Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China;Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | Porous silicon (PS) treated by water vapor annealing and vacuum annealing has been studied by positron annihilation lifetime spectroscopy and age-momentum correlation measurement. It is found that after water vapor annealing, non-radiative defects are reduced and defects dominating light source appear. These two types of defects change the lifetime and the S parameter of the positron annihilation and cause a drastic enhancement in the photoluminescence (PL) efficiency. Defects that cause the PL of PS show no obvious change after annealing at 300 ℃ in vacuum, therefore the PL of the sample is not influenced. |
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| Keywords: | porous silicon photoluminescence positron annihilation spectroscopy |
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