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Study of nonlinear absorption in GaAs/AlGaAs multiple quantum wells using the reflection Z-scan |
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| Authors: | Rubin Liu Yongchun Shu Guanjie Zhang Jiamin Sun Xiaodong Xing Biao Pi Jianghong Yao Zhanguo Wang Jingjun Xu |
| Institution: | (1) The Key Laboratory of Weak-Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin, 300457, China;(2) The Key Laboratory for Semiconductor Materials Science, Chinese Academy of Sciences, Beijing, 100083, China |
| Abstract: | The room-temperature third order nonlinearities in GaAs/AlGaAs multiple quantum wells have been studied using reflection Z-scan technique. Band-filling effect is considered to be the major nonlinear mechanism of the nonlinear absorption. A model to calculate the absorption coefficient of quantum wells in the nonlinear regime is presented. |
| Keywords: | Quantum wells Reflection Z-scan Nonlinear absorption Band-filling effect |
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