电子束蒸发法制备ZrO2薄膜的相变模型分析

 用电子束蒸发方法制备了纯的ZrO₂薄膜和含Y₂O₃摩尔分数为7%和13%的ZrO₂薄膜，即YSZ薄膜，通过测定薄膜的损伤阈值来验证温度诱导相变模型；并用X射线衍射（XRD）来测定ZrO₂和YSZ镀膜材料和薄膜的结构特征。结果表明：ZrO₂镀膜材料和薄膜室温下都表现为单斜相，YSZ镀膜材料和薄膜室温下都以立方相存在；YSZ薄膜的损伤阈值远高于ZrO₂薄膜的损伤阈值，这是因为添加Y₂O₃后的YSZ材料的相比较稳定，在蒸发过程中不会发生相变，而ZrO₂材料则发生相变，产生缺陷，缺陷在激光作用下成为吸收中心和初始破坏点，导致ZrO₂薄膜的损伤阈值降低。

Phase transition model analysis of ZrO2 thin film deposited by electron-beam evaporation

Temperature induced phase transition model was brought forward in this paper. ZrO2 and YSZ thin films were prepared by electron-beam evaporation method and their laser induced damage thresholds(LIDT) were measured; Moreover, structure of ZrO2 and YSZ coating materials and thin films was tested by X-ray diffraction. These results indicate that ZrO2 coating material and thin films are monoclinic phase and YSZ coating material and thin films are cubic phase; LIDT of 7% and 13% mole fraction YSZ thin film are 18.7 J/cm2 and 19.4 J/cm2 respectively which is higher than that of ZrO2 thin film 12.2 J/cm2. The reason is that ZrO2 material is prone to lace phase transition and defects, during the course of evaporation while YSZ material is not. The defects would become absorptive centers and initia