| NiSi Film Synthesized by Isochronal Annealing in a Magnetron Sputtering System |
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| 引用本文： | 岳双林 罗强 时成瑛 杨洪新 王强 徐鹏 顾长志. NiSi Film Synthesized by Isochronal Annealing in a Magnetron Sputtering System[J]. 中国物理快报, 2006, 23(3): 678-681 |
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| 作者姓名： | 岳双林 罗强 时成瑛 杨洪新 王强 徐鹏 顾长志 |
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| 作者单位： | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 50472073 and 90406024-1, and the National Center for Nanoscience and Technology of China. |
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| 摘 要： | By repeatedly pre-cleaning the sputtering chamber with Ar gas and in-situ isochronal annealing samples, NiSi films are successfully prepared on Si （100） substrates in a radio-frequency magnetron sputtering system. A comparison between the obtained NiSi and excess oxygen-contaminated Ni/Si films has been performed by EDX analysis of oxygen atomic content in both the films. Focused ion beam milling technology is employed to make the cross-sections of the samples for characterizing the NiSi film thickness and NiSi/Si interface roughness. The influences of nickel film thickness on the NiSi-film morphology and on the NiSi/Si interface roughness are studied.
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| 关 键 词： | NiSi薄膜 等时线退火 磁电管飞溅系统 氩气 薄膜物理学 |
| 收稿时间： | 2005-12-06 |
| 修稿时间： | 2005-12-06 |
NiSi Film Synthesized by Isochronal Annealing in a Magnetron Sputtering System |
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| YUE Shuang-Lin, LUO Qiang, SHI Cheng-Ying, YANG Hong-Xin, WANG Qiang, XU Peng, GU Chang-Zhi. NiSi Film Synthesized by Isochronal Annealing in a Magnetron Sputtering System[J]. Chinese Physics Letters, 2006, 23(3): 678-681 |
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| Authors: | YUE Shuang-Lin LUO Qiang SHI Cheng-Ying YANG Hong-Xin WANG Qiang XU Peng GU Chang-Zhi |
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