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Enhancement of H2 Sensing Properties of In2O3-based Gas Sensor by Chemical Modification with SiO2
作者姓名:ZiLiZHAN  DengGaoJIANG  JiaQiangXU
作者单位:[1]SchoolofChemicalEngineering,ZhengzhouUniversity,Zhengzhou450002 [2]DepartmentofChemicalEngineering,ZhengzhouInstituteofLightIndustry,Zhengzhou450002
摘    要:The sensitivity and selectivity to H2 of a new In203-based gas sensor were improved significantly by surface chemical modification. A dense layer of SiO2 near the surface of the porous In2O3 bead was formed by chemical vapor deposition (CVD) of diethoxydimethysilane (DEMS). The dense layer functioned as a molecular sieve, thereby the diffusion of gases with large molecular diameters, except for 1-12, was effectively controlled, resulting in a prominent selectivity and high sensitivity for H2. The working mechanism of the sensor was also presented.

关 键 词:氢气传感器  三氧化二铟  分子筛  表面修饰  二氧化硅  化学气相沉积  二乙氧基二甲硅烷

Enhancement of H2 Sensing Properties of In2O3-based Gas Sensor by Chemical Modification with SiO2
ZiLiZHAN DengGaoJIANG JiaQiangXU.Enhancement of H2 Sensing Properties of In2O3-based Gas Sensor by Chemical Modification with SiO2[J].Chinese Chemical Letters,2004,15(12):1509-1512.
Authors:Zi Li ZHAN  Deng Gao JIANG  Jia Qiang XU  School of Chemical Engineering  Zhengzhou University  Zhengzhou
Institution:Zi Li ZHAN,Deng Gao JIANG,Jia Qiang XU,School of Chemical Engineering,Zhengzhou University,Zhengzhou 450002 Department of Chemical Engineering,Zhengzhou Institute of Light Industry,Zhengzhou 450002
Abstract:The sensitivity and selectivity to H_2 of a new In_2O_3-based gas sensor were improved significantly by surface chemical modification. A dense layer of SiO_2 near the surface of the porous In_2O_3 bead was formed by chemical vapor deposition(CVD)of diethoxydimethysilane(DEMS). The dense layer functioned as a molecular sieve, thereby the diffusion of gases with large molecular diameters,except for H_2, was effectively controlled, resulting in a prominent selectivity and high sensitivity for H_2. The working mechanism of the sensor was also presented.
Keywords:H_2 gas sensor  indium oxide  molecular sieve  
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