Photon-stimulated ion desorption from DCOO/Si(100) near the O K-edge
Authors:
Hiromi Ikeura Sekiguchi and Tetsuhiro Sekiguchi
Affiliation:
a Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
b Japan Atomic Energy Research Institute, Spring-8 Facility, Kamigohri, Hyogo, 678-12, Japan
Abstract:
Photon-stimulated ion desorption from deuterated formic acid chemisorbed on Si(100) has been studied using pulsed synchrotron radiation in the energy region of the oxygen 1s electron excitation. The O 1s electrons of hydroxyl oxygen and carbonyl oxygen could be selectively excited in the O K-edge region because the chemical environments are different. It is found that the CDO+ yield is enhanced at the O 1s(C---O)→σ*(C---O) resonance and the CD+ yield at the O 1s(C=O)→σ*(C---O) resonance. The results indicate that ion desorption is related both to the antibonding character of excited molecular orbitals and the local character of core hole orbitals.