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Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices |
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| Authors: | Kai-Huang Chen Kuan-Chang Chang Ting-Chang Chang Tsung-Ming Tsai Kuo-Hsiao Liao Yong-En Syu Simon M Sze |
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| 本文献已被 SpringerLink 等数据库收录！ | |