| Abstract: | The energy dependencies of the transmission coefficients of electrons in GaAs/AlAs-structures with a different number of layers
are obtained using the three-valley model developed earlier. It is shown that it is important to take into account the ΓX-mixing
with GaAs/AlAs(001)-heterointerfaces in the electron wave functions for such structures. A relation is established between
the form of the Γ- and X-resonances in the transmission spectrum, the thickness of the layers and their number. Some features
in the behavior of the resonances are analyzed using the simple two-valley model. It is shown that to study ΓX-mixing, structures
which include at least one electrode of AlAs are preferable.
V. D. Kuznetsov Siberian Physico-Technical Institute, Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh
Zavedenii, Fizika, No. 1, pp. 63–69, January, 1997. |
