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Structure and Properties of Yb₃Ge₅

Authors:	A Grytsiv D KaczorowskiA Leithe-Jasper P Rogl M PotelH Noël AP PikulT Velikanova

Institution:	^a Institut für Physikalische Chemie, Universität Wien, Währingerstrasse 42, A-1090, Wien, Austria ^b W. Trzebiatowski Institute for Low Temperature and Structure Research, Polish Academy of Sciences, P-50-950, Wroclaw, 1410, Poland ^c Laboratoire de Chimie du Solide et Inorganique Moléculaire, UMR CNRS 6511, Université de Rennes I, Avenue du Général Leclerc, F-35042, Rennes Cedex, France ^d Institute for Problems of Materials Science, Krzhyzhanovsky 3, Kiev, Ukraine

Abstract:	Single crystals of Yb₃Ge₅, grown from pure gallium or indium metal flux and investigated by means of CCD four-circle diffractometry, were consistent with the Th₃Pd₅-type of structure, displaying full order of vacancies and germanium atoms. From magnetic susceptibility and electrical resistivity measurements, performed on single-crystalline specimens, Yb₃Ge₅ was found to be an intermediate valent systems.

Keywords:	Flux-grown single crystals of Yb₃Ge₅ crystal structure of Yb₃Ge₅ with Th₃Pd₅-type magnetism and electrical conductivity intermediate valent system
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