用于存储器电路的ONO结构特性研究

为研究存储器的多晶间介质采用ONO(Oxide-Nitride-Oxide)结构的基本特性,从ONO叠层的工作原理和它在器件制作中的工艺结构出发,设计了采用ONO结构存储器的模拟实验,对不同工艺条件下的ONO叠层作对比实验,通过ONO叠层的I-V曲线、漏电流、击穿场强和电荷保持特性的测试及分析,研究了不同生长条件对ONO结构的影响程度,获得了最优的ONO叠层制作条件,为存储器的设计和工艺控制提供了参考.

Study on Character of ONO Film in Flash Memory

In order to study the basic characters of ONO(Oxide-Nitride-Oxide)structure applied in IPD(interpoly dielectric)of flash memory device,simulated experiments have been designed based on ONO stack principle and process structure in device fabrication.Comparative experiments are arranged under different process conditions.Based on the measurement and analysis of I-V curves,leakage current,breakdown voltages and charge retention character of ONO stack,the study on influence of ONO structure in different process...