Blue-green laser diode grown by photo-assisted MOCVD |
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Authors: | A Toda F Nakamura K Yanashima and A Ishibashi |
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Institution: | Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan |
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Abstract: | Operation of the first blue-green laser diode grown by metalorganic chemical vapor deposition has been demonstrated at 77 K under pulsed current injection. The precursors were dimethylzinc, dimethylcadmium, diethylsulfide, bismethyl-cyclopentadienyl-magnesium, and dimethylselenide. Diisopropylamine and ethyliodide were used for a p-type and n-type doping under irradiation with ultraviolet light generated by a high-pressure mercury lamp, respectively. A 1 × 1018 cm?3 nitrogen-atom concentration, which was measured by secondary ion mass spectroscopy, was obtained in the p-ZnSe contact layer. The 4.2 K photoluminescence spectrum was dominated by strong donor-acceptor pair emission and the net acceptor concentration was 1.4 × 1016 cm?3. |
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