Large scale synthesis of silicon nanowires |
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Authors: | G F Iriarte |
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Institution: | 1.Instituto de Sistemas Optoelectrónicos y Microtecnología, ETSI de Telecomunicación,Universidad Politécnica de Madrid,Madrid,Spain |
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Abstract: | Artificial nanostructures (Samuelson et al., Physica E 21:560–567, 2004; Xia et al., Adv Mater 15:353–389, 2003) show promise for the organization of functional materials (Huck and Samuelson, Nanotechnology 14:NIL_5–NIL_8, 2003) to create nanoelectronic (Mizuta and Oda, Science 279:208–211, 2008) or nano-optical devices (Mazur et al.; Tanemura et al., Synthesis, Optical Properties and Functional Applications of ZnO
Nano-materials: A Review, 1–3:58–63, 2008). However, in most manufacturing recipes described so far, nanostructures are synthesized in solution and/or uncontrolled
deposition results in random arrangements; this makes it difficult to measure the properties of attached nanodevices or to
integrate them with conventionally fabricated microcircuitry. Here, we describe a fully CMOS compatible process technology
for mass manufacture of polysilicon nanowires by the CVD (chemical vapor deposition) method. The large scale production of
nanowires could successfully be synthesized on silicon (100) substrates. However, the method presented here can successfully
be employed with all technologically useful substrates with good adhesion for silicon such as SiO2, diamond-like carbon or III–V semiconductors. This opens up the possibility for the fabrication of strain-sensitive and defect-sensitive
optoelectronic devices on the optimum III–V substrate (Fonstad et al.). Finally, scanning electron microscopy (SEM) was used
to characterize the as-synthesized nanowires and energy-filtered transmission electron microscopy (EFTEM) and scanning transmission
electron microscopy (STEM) analysis were used to determine the nanowire composition. |
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