CEMS study of silicon implanted iron

Thin layers of iron-rich Fe-Si alloys were formed by silicon implantation into iron at room temperature with different energies (100, 200, and 300 keV) and ion doses (2 × 10¹⁷ to 1×10¹⁸ cm^–2). The produced layers were investigated by⁵⁷Fe conversion electron Mössbauer spectroscopy (CEMS) to identify the phases formed by the ion implantation. Auger electron spectroscopy (AES) was used to measure the concentration depth profiles of the implanted silicon. Depending on the implantation parameters different disordered Fe-Si structures were detected. At low doses only magnetic phases were formed while at high doses a non-magnetic phase with a hitherto unknown structure appeared. Annealing of the samples resulted first in the formation of a D0₃-like short-range order and a slow decrease of the non-magnetic phase, and subsequently in the migration of Si out of the investigated depth range.