PtSi／p－Si肖特基势垒红外探测器的研制

介绍了ＰｔＳｉ／ｐ－Ｓｉ肖特基势垒红外探测器（简称ＩＲ－ＳＢＤ）的优化结构及探测机理，给出了探测器的光增益模型，并对器件进行了制作及性能测试。器件在７７Ｋ下，反偏４Ｖ时的反向漏电流为５×１０（－６）μＡ，对１．５２μｍ红外光的灵敏度为２．６９×１０（－２）Ａ／Ｗ，量子效率为２．４％。

Study and Manufacture of PtSi/p-Si Infrared Schottky Barrier Detector

Detecting principle and optimized structure of PtSi/p-Si infrared Schottky barrier detector(IR-SBD) are described in this paper. Photoyield model of the detector is given. The manufacture and characteristic test of the IR-SBD are also successfully carried out. Under the temperature of 77 K, the reverse leakage current of the IR-SBD is 5× 10(-6) μA at reverse bias voltage of 4 V. The responsibility is 2. 69×10(-2) A/W and quantum efficiency is 2. 4% for the infrared light wavelength of 1. 52μm.