| InAs/GaAs和InAs/InxGa1-xAs/GaAs纳米线异质结构的生长研究 |
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| 引用本文： | 叶显,黄辉,任晓敏,郭经纬,黄永清,王琦,张霞. InAs/GaAs和InAs/InxGa1-xAs/GaAs纳米线异质结构的生长研究[J]. 物理学报, 2011, 60(3): 36103-036103 |
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| 作者姓名： | 叶显 黄辉 任晓敏 郭经纬 黄永清 王琦 张霞 |
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| 作者单位： | 北京邮电大学,信息光子学与光通信教育部重点实验室,北京 100876 |
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| 基金项目： | 国家重点基础研究发展计划(批准号:2010CB327600),"111"计划项目(批准号:B07005),国家高技术研究发展计划(批准号:2009AA03Z405, 2009AA03Z417),中央高校基本科研业务费专项资金(批准号:BUPT2009RC0409, BUPT2009RC0410)资助的课题. |
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| 摘 要： | 利用金辅助金属有机化学气相沉淀法(MOCVD)在GaAs(111)B衬底上分别制备了InAs/GaAs和InAs/In x Ga1-xAs/GaAs(0≤x≤1)纳米线异质结构.实验结果显示,直接生长在GaAs纳米线上的InAs纳米线生长方向杂乱或者沿着GaAs纳米线侧壁向衬底方向生长,生长的含有In x Ga1-xAs组分渐变缓冲段的InAs/In x Ga1-x关键词：纳米线异质结构xGa1-xAs')" href="#">InxGa1-xAs组分渐变缓冲层金属有机化学气相沉淀法
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| 关 键 词： | 纳米线异质结构 InxGa1-xAs 组分渐变缓冲层 金属有机化学气相沉淀法 |
| 收稿时间： | 2010-01-11 |
Growths of InAs/GaAs and InAs/Inx Ga1-xAs/GaAs nanowire heterostructures |
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| Ye Xian,Huang Hui,Ren Xiao-Min,Guo Jing-Wei,Huang Yong-Qing,Wang Qi,Zhang Xia. Growths of InAs/GaAs and InAs/Inx Ga1-xAs/GaAs nanowire heterostructures[J]. Acta Physica Sinica, 2011, 60(3): 36103-036103 |
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| Authors: | Ye Xian Huang Hui Ren Xiao-Min Guo Jing-Wei Huang Yong-Qing Wang Qi Zhang Xia |
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| Affiliation: | Key Laboratory of Information Photonics and Optical Communications (Ministry of Education), Beijing University of Posts and Telecommunications, Beijing 100876, China;Key Laboratory of Information Photonics and Optical Communications (Ministry of Education), Beijing University of Posts and Telecommunications, Beijing 100876, China;Key Laboratory of Information Photonics and Optical Communications (Ministry of Education), Beijing University of Posts and Telecommunications, Beijing 100876, China;Key Laboratory of Information Photonics and Optical Communications (Ministry of Education), Beijing University of Posts and Telecommunications, Beijing 100876, China;Key Laboratory of Information Photonics and Optical Communications (Ministry of Education), Beijing University of Posts and Telecommunications, Beijing 100876, China;Key Laboratory of Information Photonics and Optical Communications (Ministry of Education), Beijing University of Posts and Telecommunications, Beijing 100876, China;Key Laboratory of Information Photonics and Optical Communications (Ministry of Education), Beijing University of Posts and Telecommunications, Beijing 100876, China |
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| Abstract: | InAs/GaAs and InAs/In xGa1-xAs/GaAs nanowire heterostructures are grown by metal organic chemical vapor deposition via Au-assistant vapor-liquid-solid mechanism. We find that the InAs nanowires grow directly on GaAs nanowires in a random way, or they grow along the sidewall of the GaAs nanowires, and thet InAs nanowires grow vertically on GaAs nanowires by using an In x Ga1-xAs (0≤x≤1) buffer segment. It can be concluded that the influences of crystal lattice mismatch and difference in interfacial energy can be eliminated by inserting a ternary compound semiconductor buffer segment, thereby improving the crystal quality and the capability to control the growth of nanowire heterostructure. |
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| Keywords: | nanowire heterostructure In x Ga1-xAs buffer segment metal organic chemical vapor deposition |
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