The Formation of Helium Bubbles in Silicon Surface Layers via Plasma Immersion Ion Implantation |
| |
Authors: | A. A. Lomov Yu. M. Chesnokov A. P. Oreshko |
| |
Affiliation: | 1.Institute of Physics and Technology,Russian Academy of Sciences,Moscow,Russia;2.Research Center Kurchatov Institute,Moscow,Russia;3.Department of Physics,Moscow State University,Moscow,Russia |
| |
Abstract: | The surface layers of single-crystal silicon Si(001) substrates subjected to plasma-immersion implantation with 2- and 5-keV helium ions to a dose of 5 × 1017 cm–2 were probed via grazing incidence small-angle X-ray scattering and transmission electron microscopy. A surface layer formed by helium ions was found to possess a multilayer structure, wherein the upper layer is amorphous silicon, being on top of a sublayer with helium bubbles and a sublayer with a disturbed crystal structure. The in-depth electron density distribution, as well as the concentration and pore-size distribution, were established. The average pore sizes of bubbles at the above implantation energies are 4 nm and 8 nm, respectively. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|