Single-electron transistor with an island formed by several dopant phosphorus atoms |
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Authors: | S A Dagesyan V V Shorokhov D E Presnov E S Soldatov A S Trifonov V A Krupenin O V Snigirev |
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Institution: | 1.Department of Physics,Moscow State University,Moscow,Russia;2.Skobeltsyn Institute of Nuclear Physics,Moscow State University,Moscow,Russia |
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Abstract: | We present the results of an experimental study of electron transport through individual phosphorus dopants implanted into a silicon crystal. We developed an original technique for single-electron transistor fabrication from silicon-on-insulator material with an island formed by single phosphorus atoms. The proposed method is based on well-known CMOS compatible technological processes that are standard in semiconductor electronics and may be used in most research groups. The large Coulomb blockade energy value of the investigated single-electron transistor (~20 meV) allows one to observe single-electron effects in a wide temperature range up to 77 K. We measured and analyzed stability diagrams of fabricated experimental structures. We demonstrated a single-electron transistor with controllable electron transport through two to three phosphorus dopants only. |
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