Electrical properties of neutron-transmutation-doped InSe

Neutron-transmutation-doping (NTD) has been used to introduce a controlled amount of tin-related shallow donors with a uniform distribution into the layered semiconductor InSe. The electrical properties of transmutation-doped (TD) InSe, between 30 and 300 K have been measured and compared with those of InSe conventionally tin-doped during growth. After annealing at 450°C, the lattice damage associated with NTD is removed and the donor centres become electrically active. For concentrations of transmutated Sn bigger than 10¹⁷ cm^-3 the free-electron concentration saturates and this is interpreted as a result of segregation determined by the Sn solubility limit in the host lattice. The Hall mobility at room temperature is higher in TD samples than in conventionally tin-doped ones for the same electron concentration.