Location of self-interstitial atoms in boron-implanted silicon by means of rutherford backscattering of channelled ions

Abstract

For locating self-interstitial atoms in silicon by means of Rutherford backscattering of channelled ions, boron has been implanted at room temperature and at the temperature of liquid nitrogen. The employed implantation doses were 2. 10¹⁴ cm^?2 and 7. 10¹³ cm^?2, respectively. The experiments have been performed at 300 K and at 120 K to reduce ionization-stimulated annealing. The beam of 1.4 MeV He⁺-ions was highly collimated.

To obtain the configuration of implantation-induced self-interstitial atoms symmetry considerations have been performed.

The location experiments presented indicate the existence of isolated self-interstitial atoms in silicon. Under the conditions of these experiments the interstitial atoms assume a (110) split configuration of orthorhombic symmetry.