Annealing studies of electron-irradiated copper and copper-hydrogen alloys |
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| Authors: | C Papastaikoudis |
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| Institution: | 1. Institut für Festk?rperforschung der Kernforschungsanlage Jülich , D-517, Jülich, W. Germany;2. Nuclear Research Center “Democritos” , Aghia Paraskevi, Athens, Greece |
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| Abstract: | Systematic investigations on the effect of small doses of ionizing radiation on defective semiconducting crystals have revealed an interesting feature : under a dose of 104minus;106r gamma-ray irradiation or 1012minus;1014e/cm2 electron flux the number of defects does not increase but decreases, and ordering of the crystal structure takes place.1 The number of removable defects determined by the backscattering method of channelling charged particles is 10 times higher than the number of generated electron-hole pairs. Therefore we assume that ordering of the crystal structure is taking place by chain annihilation reactions between the defects, initiated by ionization.2,3 |
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| Keywords: | Floating Gate MOS transistor radiation dosimeter gamma radiation |
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