Carrier removal by implanted IONS in GaAs |
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| Authors: | H. S. Gecim B. J. Sealy K. G. Stephens Y. Ono |
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| Affiliation: | Department of Electronic and Electrical Engineering , University of Surrey , Guildford, Surrey, UK |
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| Abstract: | Abstract A model for calculation of the range distribution of energetic ions with taking into account the channeling effect is proposed. The measurement of the depth distributions of boron ions in silicon crystals implanted at 13.6 and 91 MeV revealed significant difference between the measured and the calculated range profiles when the channeling effects have not been included in the calculation. In spite of deminishing the critical angles of channeling with growing ion energy the probability of the capture of ions into the channeling regime is significant in case of high energy implantation even when the incident angles are 7–10° off the main crystallographic directions. |
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| Keywords: | ion implantation high energy boron silicon channeling |
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