Resistivity control of sputtered amorphous-silicon by ion-implantation |
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| Authors: | Hideki Matsumura Nobuyuki Kuzuta Hiroshi Ishiwara Seijiro Furukawa |
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| Affiliation: | Department of Applied Electronics , Tokyo Institute of Technology , Nagatsuda, Midori-ku, Yokohama, 227, Japan |
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| Abstract: | The resistivity of a hydrogenated sputtered amorphous-silicon is controlled by using room temperature implantation of P+. It is found that the defects produced by implantation can be minimized by annealing at 300°C in an H2 atmosphere, and also found that there is a threshold implanted dose, beyond which the resistivity begins to be controlled by changing the dose. |
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| Keywords: | Ion irradiation Pyrochlore Fluorite Amorphization Point defects |
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