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The influence of the implantation temperature on the generation of dislocations in antimony-implanted and annealed silicon
Authors:W. K. Hofker  W. J. M. J. Josquin  D. P. Oosthoek  J. R. M. Gijsbers
Affiliation:1. Philips Research Laboratories , Eindhoven, The Netherlands;2. Philips Research Laboratories, Amsterdam Department , Oosterringdijk 18, Amsterdam, The Netherlands;3. Philips Research Laboratories , Eindhoven, The Netherlands
Abstract:We report the first observation of non-equilibrium redistribution effects during laser treatment of a binary system having equilibrium segregation coefficient, k0, much greater than unity. Polycrystalline aluminium samples implanted with 30 keV Sb+ ions to a dose of 1.7 × 1017 ions/cm2 were irradiated with single pulses (7 ns FWHM) from a Nd: glass laser operating in TEM00 mode. The peak energy density (at the centre of the laser spot) varied from 2.0 to 5.7 J/cm2. A detailed liquid phase diffusion analysis, explicitly incorporating rapid melt front motion and interfacial segregation, is performed to fit the Sb depth profiles measured with a nuclear microprobe. An effective distribution coefficient k = 1 (as compared to equilibrium value of k0~7) is obtained in agreement with the theoretical limiting value for large melt front velocities.
Keywords:Tin doped indium oxide  Absorption coefficient  Irradiation
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