Optical characterization of thin silicon films deposited by CVD and annealed by pulsed laser |
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| Authors: | M. O. Lampert J. P. Ponpon R. Stuck P. Siffert |
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| Affiliation: | Centre de Recherches Nucleaires, Groupe de Physique et Applications des Semiconductors (PHASE) , 67037, Strasbourg-Cedex, France |
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| Abstract: | Polycrystalline Si layers 100 to 800 nm thick have been deposited on Si single crystal substrates by CVD and annealed with a Q-switched ruby laser at energies up to 1.5 J/cm2. The optical characteristics of these layers have been measured by SEM and ellipsometry. The results can be attributed to a change in surface roughness with film thickness and laser energy. |
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| Keywords: | organic molecules electronic sputtering fission products angular dependence ion track pressure wave molecular dynamics |
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