Model correction for the formation of amorphous silicon by ion implantation |
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| Authors: | John R. Dennis Edward B. Hale |
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| Affiliation: | Department of Physics and Materials Research Center , University of Missouri-Rolla , Rolla, Missouri, 65401 |
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| Abstract: | The critical dose at which an implanted amorphous layer in silicon is formed cannot be explained by a previous energy independent model. An energy dependent correction to this model can explain our ESR data as well as other data. The correction is most important for light ions. |
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| Keywords: | dental radiography effective dose panoramic imaging dosimetry |
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