A study of radiation damage by elastic scattering experiments

Abstract

Chaneling measurements are used to study the structure and configuration of defects produced in CdS under irradiation by 50–150 KeV Na⁺ ions at room temperature with a current density of 1 μA/cm² and irradiation dose 3.10¹⁵ ion/cm².

The results of studies of 1.8 MeV He⁺ ion dechaneling along the <1120> and <0001> axes are probably indicative of the defect structure extended along the <0001> axis.

For the dependence of the dechaneling cross-section on the ⁴He energy in the energy range 1.2 to 2.4 MeV we found E^?1, which characterizes the produced defects as randomly distributed complexes of interstitial atoms straining the crystal lattice.

The fact that the defects are mostly located along the <0001> direction can possibly be explained by strong anisotropy of CdS therefore the defects form the region of elastic stresses in the crystal which are maximum along the <0001> axis.