Low-temperature electrical resistivity characteristics of fast-neutron-irradiated CdS: New concepts in neutron detection |
| |
Authors: | Ralph T. Johnson Jr |
| |
Affiliation: | Sandia Laboratories , Albuquerque, New Mexico, 7115 |
| |
Abstract: | Time dependent electrical resistivity changes at low temperature in fast-neutron irradiated CdS have been studied. The experiments were on low-resistivity single crystals, and the electrical changes result from radioactive decay effects induced by the fast-neutron irradiation. Results show that following neutron irradiation and upon lowering the sample temperature, the resistivity decreases with time and approaches a stable value. These effects are attributed to trapping phenomena, and can be erased by increasing the temperature. The time dependent electrical changes associated with radioactive decay provide a new means for neutron detection. |
| |
Keywords: | channelling hydrogen lattice location vanadium Nb-Mo alloy nuclear reaction 1H(11B,α)αα |
|
|