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High dose implantations of antimony for buried layer applicationsrrr |
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| Authors: | J P Gailliard M Dupuy M Garcia J C Roussin M Roche |
| Institution: | 1. Commissariat à l'Energie Atomique Leti , 85 X, 38041, Grenoble, France;2. Commissariat à l'Energie Atomique Leti , 85 X, 38041, Grenoble, France;3. Motorola , Le Mirail BP 3411, 31023, Toulouse, France;4. Thomson, Sescosem , 38120 St. Egreve, France |
| Abstract: | A computer simulation of low energy implantation is presented. The method of calculation takes into account the inelastic processes and vacancies in the crystal lattice. The described simulation was used for a nitrogen implanted molybdenum single crystal. From the result of the calculation the possible positions of implanted nitrogen on the surface and in the bulk were obtained. The results of simulations are compared with those measured by SIMS and AES. |
| Keywords: | Tin oxide Sintering Dopants Sintering atmospheres |