Preferential etching of ion bombarded GaAs

Abrupt changes in the near-band-edge luminescence of n-type undoped GaAs after implantation with 400 keV Zn ions and vacuum annealing at 580°C are reported. The good agreement of the spectral position, half-width and temperature dependence of the emission obtained after implantation and annealing with that of melt-doped GaAs: Zn indicates that implanted Zn ions have been incorporated at Ga lattice sites. The larger number of Zn substitutions obtained when bombardment is made on the Ga face than for an equivalent fluence on the As face demonstrates the existence of a polar implant effect.