Doping profiles from the capacity-voltage (C–V) characteristics of the [111] Si(p) single crystals doped by the In+ -ion-implantation 期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Doping profiles from the capacity-voltage (C–V) characteristics of the [111] Si(p) single crystals doped by the In+ -ion-implantation

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