Low temperature photoconductivity in electron - irradiated p-type Si |
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| Authors: | P. Vajda L. J. Cheng |
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| Affiliation: | 1. Chalk River Nuclear Laboratories , Atomic Energy of Canada Limited , Chalk River, Ontario, Canada;2. Laboratoire de Chimie Physique , Faculté des Sciences de Paris , 91, Orsay, France;3. Institute of Atomic Energy Research , Lung-Tan, Taiwan, Republic of China |
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| Abstract: | The photoconductivity spectra of p-type silicon irradiated at ～15 °K with 1.2 MeV electrons were studied in the wavelength range from 1.2 to 5.5 μ at temperatures from 23 to 80 °K. The 3.9 μ photoconductivity band appears immediately after irradiation in all crystals already at low temperatures, giving further evidence that it is due to the divacancy formed directly during irradiation by electrons. Three main annealing stages of the photoconductivity have been observed; (a) below 160 °K, (b) 160–250 °K, and (c) 280–360 °K. A radiation-induced deep level at Ev , +(0.12±0.02 eV disappears upon annealing at stage b. The annealing behavior of the spectra depends strongly on the measuring temperature. The dependence of the spectra on chopper speed was also investigated. |
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