Helium migration in palladium II. scanning electron microscopy examination of high concentration samples |
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Authors: | G J Thomas W Bauer J B Holt |
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Institution: | 1. Sandia Laboratories , Albuquerque, New Mexico, 87115;2. Sandia Laboratories , Livermore, California, 94550;3. Lawrence Radiation Laboratory, University of California , Livermore, California, 94550 |
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Abstract: | Scanning electron microscopy has been used to examine bulk phenomena of palladium samples annealed at 1200°C after implantation to a dose of 1017 He atoms/cm2 at 5 MeV. A 3μ deep porous layer was found at a depth of 10.9μ±0.3μ. Wide grain boundaries (microcracks) extended from this layer to the top surface of the sample. |
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