Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions |
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| Authors: | I P Akimchenko K V Kisseleva V V Krasnopevtsev A G Touryanski V S Vavilov |
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| Institution: | P. N. Lebedev Physics Institute of the USSR Academy of Sciences , Moscow, USSR |
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| Abstract: | Two-photon excitation spectrum of the luminescence emitted in the A T -band has been observed in KBr:In+ and NaBr:Tl+. The nonlinear excitation follows the A-band lineshape but reveals a feature, not present in one-photon spectrum, that may be interpreted as due to the forbidden 1 AIg →3AIu transition. The cross section of the process indicates that the two-photon transitions are indirect ones, allowed by phonons. The dependence of the emitted light intensity upon the direction of polarization of the exciting photons, makes it possible to identify the symmetry of the transitions. |
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| Keywords: | lasers color center lasers mode-locked lasers solid-state femtosecond phenomena pulse amplification |
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