Energy deposition and penetration depth of heavy ions in the electronic stopping region |
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Authors: | P. Sigmund M. T. Matthies D. L. Phillips |
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Affiliation: | Section Physique des Couches Minces , Laboratoire ?Electrostatique et de Physique du Metal , Cedex, 166-38, Grenoble-Gare, France |
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Abstract: | Previous calculations of spatial moments over the distribution of ion ranges and bombardment damage have been extended into the range of ion energies where electronic stopping is important. Numerical solutions are given of well-known integral equations, under the assumption of Thomas-Fermi scattering and velocity-proportional electronic stopping, for equaI masses of ion and target and five values of the electronic stopping constant, over a range of four decades of ion energy. The results are compared with experimental damage distributions, with good success. Implications on sputtering are mentioned briefly. |
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Keywords: | Irradiation Schottky barrier diode CONTROL Annealing |
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