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Positron annihilation in electron-irradiated n-type gap crystals |
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| Authors: | V. N. Brudnyi S. A. Vorobiev A. A. Tsoi V. I. Shahovtsov |
| Affiliation: | 1. V. D. Kuznetsov Siberian Physico-Technical Institute , 634050 , Tomsk , USSR;2. Institute of Nuclear Physics at Polytechnical Institute , 634004 , Tomsk , USSR;3. Institute of Physics, Ukrainian Academy of Science , 252650 , Kiev , USSR |
| Abstract: | Abstract The defects in n-GaP crystals irradiated by 2.3 MeV electrons up to 1 × 1019 cm?2 at RT were studied by means of positron annihilation (angular correlation) and electrical property measurements. It was found that positrons are trapped in some radiation-induced vacancy-type defects (acceptors) but that the effect saturates at high electron fluences (D1 × 1018 cm?2). The trapping rate in irradiated samples increases with temperature in the range 77–300 K. Post-irradiation isochronal annealing reveals the positron traps clustering at about 200–280°C. All positron sensitive radiation-induced defects disappear upon annealing up to 500°C. |
| Keywords: | Surface defects Surface reactivity MgO nanoparticles Chemical Vapour Deposition EPR FTIR |