Ellipsometric study of tellurium implanted silicon |
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| Authors: | A. Kučírková |
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| Affiliation: | Department of Solid State Physics, Faculty of Science , J. E. Purkynê University , Brno, Czechoslovakia |
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| Abstract: | Abstract Ellipsometric parameters as a function of the dose (D = 2.1013 ? 2.1015 ions cm?2) and annealing temperature have been measured on the silicon implanted with 30 keV Te ions. Obtained information on lattice disorder are to a great extent comparable with those of other methods, e.g. backscattering technique. Moreover optical constants of a damage surface layer may be estimated. |
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