Target heating during ion implantation and related problems

We have undertaken a general analysis of wafer heating during implantation and first, we present general considerations of this problem with respect to amorphization doses extracted from Morehead and Crowder theory. Then, radiative properties of silicon wafers are measured: a law of variation of the emissivity with temperature is given; a comparison is made with values found in the literature. Dependence with experimental conditions (heat reflector, conductive losses) is also studied. Three methods for temperature measurement are used: temperature coefficient of a small resistor vacuum deposited on a face, thermocouple measurement and infrared detection. We compare the three kinds of results which are in good agreement and we make some comments about the temperature measurements using infrared detection.