Influence of temperature and electrolyte ions on the properties and spectrum of solvated electrons in irradiated hexamethylphosphortriamide

Abstract

Radiation-induced latchup in commercially available junction-isolated integrated microcircuits is reported. Four different types of construction of integrated microcircuits have been examined. They include quadruplediffused, diffused collector, epitaxial, and epitaxial with buried layer (gold-doped). It was found that pnpn switching could be obtained between isolated components on these devices. In fact, pnpn paths were quite common in all but the last type mentioned. The current gains of the parasitic transistors involved in these pnpn paths were measured and were, in most cases, shown to indicate that pnpn switching should occur. However, important exceptions were seen. Latchup between these isolated components could be induced by a pulse of ionizing radiation even with a reverse bias on the substrate of the microcircuits. As a result of this investigation, it is concluded that the pnpn mechanism, since it is so common, is a majorcause of latchup in junction-isolated integrated microcircuits.