Lithium-an impurity of interest in radiation effects of silicon

The introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons are studied. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.