Investigation of point defects in silicon and germanium by non-irradiation techniques |
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| Authors: | A Seeger |
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| Institution: | Max-Planck-Institut für Metallforschung, Institut für Physik , Stuttgurt, Germany |
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| Abstract: | We have derived a simple empirical formula for sputtering yields of monatomic metals and semiconductors, taking the threshold effect for knock-on of atoms into account in the Sigmund theory. It is found that this semi-empirical formula fits to the energy dependence of the sputtering yields over a wide range of ion-target combinations. The best fit values of the parameters for the formula are given as a function of the ratio of the mass of target atoms and the mass of incident ions. |
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| Keywords: | Dose distribution heavy ion heavy ion track track registration radiation effects stopping power silicon silicon dioxide lithium fluoride sodium iodide |
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