Electrical properties of indium implanted silicon

Electrical conductivity and Hall effect were measured from 100° to 278°K as a function of layer removal to determine the indium ionization energy and the presence of compensating centers resulting from the implantation of indium into silicon. The implants were fully annealed to reduce the influence of radiation damage. For comparison, similar measurements were performed on silicon shallow diffused with indium. Differential analysis methods were used to compute carrier concentration, mobility, and resistivity for the stripped layers. In addition, Hall measurements were performed on silicon uniformly doped with indium. In all three cases an indium energy level of 160 meV was observed. Mobility plots versus temperature were also consistent. However, significant compensation effects were noticed in the implants.