Fundamental analysis of defects induced by energetic ions implantation in AgCl |
| |
| Authors: | J L Gisclon J F Jal J Dupuy |
| |
| Institution: | Département de Physique des Matériaux, Associé au CNRS n° 172 , Université Claude Bernard Lyon I , 43, boulevard du 11 Novembre 1918, 69621, Villeurbanne, France |
| |
| Abstract: | The effects of the energetic ions implantation in AgCl can be related to two types of perturbation due to: the electronic energy losses observed, essentially with H+ (2 MeV) implantation and the collision energy losses illustrated in K+ (0.5 MeV) implantation. The ionization influence is essentially the sensibilization of AgCl (print-out) at RT and at LNT. We discuss the the photolysis mechanism regarding the one postulated under action of light. The defects related to collision losses are characterized by a new optical absorption band with a characteristic length independent of the implanted ion (Na+ and K+). The nature of those defects are analysed by thermal and optical bleaching and by EPR. Those collision effects do not contribute to the print-out phenomena. |
| |
| Keywords: | |
|
|
