Radiation-enhanced diffusion of boron in germanium during ion implantation |
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| Authors: | M. I. Guseva A. N. Mansurova |
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| Affiliation: | Kurchatov Atomic Energy Institute, Moscow , Kurchatov Square, U.S.S.R. |
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| Abstract: | An effect of radiation-enhanced diffusion during boron ion implantation into 200-500°C germanium substrates has been found. The boron-enhanced diffusion coefficient is independent of the temperature over the range 200-500°C during ion implantation, depends upon the dose rate of the incident ions and its value corresponds to the thermal diffusion of boron in germanium at 800°C. |
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| Keywords: | synthetic mica gamma electron beam thermoluminescence |
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