| 衬底温度对PECVD氮化硅膜性质的影响 |
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| 引用本文： | 张秀淼
,杨爱龄
,石国华
,江春叶
,王丹
,包蕾.衬底温度对PECVD氮化硅膜性质的影响[J].浙江大学学报(理学版),1988,15(4):410-415. |
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| 作者姓名： | 张秀淼 杨爱龄 石国华 江春叶 王丹 包蕾 |
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| 基金项目： | 国家自然科学基金资助课题 |
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| 摘 要： | 本文研究了PECVD氮化硅膜的性质与衬底温度的关系,对不同衬底温度的膜的折射率、腐蚀速率、介电特性进行了讨论;本文还指出,膜的导电机理符合Poole-Frenkel发射.C-V曲线的显著滞后效应表明,膜中存在高密度的陷阱。
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| 关 键 词： | 半导体 氮化硅 MNS结构 |
Effects of Substrate Temperature on the Properties of PECVD SiN Films |
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| Zhang Xiumiao Yang Ailing Shi Guohua Jiang Chunye Wang Dan Bao Lei.Effects of Substrate Temperature on the Properties of PECVD SiN Films[J].Journal of Zhejiang University(Sciences Edition),1988,15(4):410-415. |
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| Authors: | Zhang Xiumiao Yang Ailing Shi Guohua Jiang Chunye Wang Dan Bao Lei |
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| Institution: | Zhang Xiumiao Yang Ailing Shi Guohua Jiang Chunye Wang Dan Bao Lei |
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| Abstract: | The correlation of properties of PECVD SiN films with their substrate temperature are investigated. The properties include refractive index, etching rate and dielectric properties. In this paper, it is demonstrated that the dominant conduction mode appears to be Poole-Frenkel emission and there exists a high density of trapping. |
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| Keywords: | semiconductor silicon nitride MNS structure |
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