Study of range distribution parameters for bismuth-ion implantation in silver gallium diselenide |
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| Authors: | X Liu Q Lu P Liu M Zhao Z Wang M Ying F Li L Qin |
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| Institution: | (1) Department of Physics, Shandong University, Jinan, Shandong 250100, P.R. China, CN;(2) School of Chemistry, Shandong University, Jinan, Shandong 250100, P.R. China, CN;(3) Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100, P.R. China, CN |
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| Abstract: | Range distributions for bismuth ions implanted in AgGaSe2 in the energy range 80–300 keV were investigated by using 2.1-MeV He2+ Rutherford backscattering spectrometry (RBS). A convolution calculation method was used to extract the true distributions
of bismuth from the measured RBS spectra. The range distribution parameters, Rp and ΔRp, were obtained and compared with those obtained from Monte Carlo simulation. The experimental Rp values agree with the Monte Carlo simulation values very well, but the experimental ΔRp values are systematically larger than those from the theoretical simulation.
Received: 28 January 2002 / Accepted: 11 April 2002 / Published online: 10 September 2002
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ID="*"Corresponding author. Fax: +86-531/856-5167, E-mail: xdliu@sdu.edu.cn |
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| Keywords: | PACS: 79 20 Rf 61 72 Ww 66 30 Jt |
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