Radiogenic Sn defects in ion-implanted CdTe |
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| Authors: | H Grann F T Pedersen G Weyer |
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| Institution: | (1) Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark;(2) ISOLDE Collaboration, CERN, CH-1211 Geneva 23, Switzerland |
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| Abstract: | Radioactive119mCd+ and119In+ ions have been implanted into CdTe single crystals at temperatures between 50–300K. Radiogenic defects formed with the daughter119Sn have been investigated by Mössbauer spectroscopy of the emitted 24 keV γ radiation. All Mössbauer spectra could be analysed consistently with three lines. These are proposed to be due to substitutional Sn on Cd sites in two different charge states and to Sn-vacancy complexes. The corresponding In-parent vacancy complexes anneal at 120K and above 300K. |
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